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PD480PI/PD480PI1
PD480PI/PD480PI1
s Features
1. High speed response ( t r , t f: TYP. 100ns at R L = 1k ) 2. Narrow acceptance ( : TYP. 20 ) 3. Compact 4. Lead forming type ( PD480PI1 )
High Speed, Narrow Acceptance Photodiodes
s Outline Dimensions
PD480PI
1.5 Detector center
2- C0.5 3.0 0.2
( Unit: mm )
Rest of gate 0.3MAX.
4.0
0.2
1.15 0.75 Transparent epoxy resin 1
R0.8 0.1 0.8MAX.
1.5 1.0
1.7
60
17.5+ -
0.15
1. Game machines 2. Optoelectronic switches 3. Infrared remote controllers for TVs, VCRs, audio equipment, air conditioners, etc.
0.2
0.5MIN.
s Applications
2.15 2.54
2
2.95
0.2
1.6
2- 0.4
1 Anode 2 Cathode
1
2.8
2
PD480PI1
1.5 Detector center
2-C0.5 3.0 0.2
1.15 0.75 Transparent epoxy resin 1 60 0.15
0.3MAX.
Rest of gate
s Absolute Maximum Ratings
Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol VR P T opr T stg T sol
( Ta = 25C )
Rating 20 75 - 25 to + 85 - 40 to + 85 260 Unit V mW C C C
R0.8 0.1 0.8MAX. 15.5MIN. 1.7
4.0
0.2
2 0.5MIN. 2- 0.4
0.2
2.15
2.54 1.6
0.2
1 Anode 2 Cathode 1.0
s Electro-optical Characteristics
*2
( Ta= 25C )
TYP. 1.7 4.0 950 100 20 MAX. 2.4 10 10 250 Unit A nA pF nm ns
2.95
*1 For 3 seconds at the position of 2.5mm from the surface of resin edge
1
2.8
2
Parameter Short circuit current Dark current Terminal capacitance Peak sensitivity wavelength Response time Half intensity angle
Symbol ISC Id Ct p tr , t f
MIN. 1.0 RL= 1k , V R= 10V EV = 100 lx VR= 10V, E V= 0 VR= 0, f= 1MHz -
Conditions
*2 E V : Illuminance by CIE standard light source A ( tungsten lamp)
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
PD480PI/PD480PI1
Fig. 1 Power Dissipation vs. Ambient Temperature
80 75 70 Power dissipation P ( mW ) 60 Relative sensitivity ( % ) 70 60 50 40 30 20 10 0 - 25 0 25 50 75 85 100 Ambient Temperature Ta ( C ) 10 0 400 500 600 700 800 900 1000 1100 1200 50 40 30 20
Fig. 2 Spectral Sensitivity
100 90 80 T a = 25C
Wavelength ( nm )
Fig. 3 Dark Current vs. Ambient Temperature
10 - 6
5
Fig. 4 Dark Current vs. Reverse Voltage
10 -8 T a = 25C 10 -9 Dark current I d ( A )
VR = 10V
10 - 7
5
Dark current I d ( A )
10 - 8
5
10 -10
10 - 9
5
10 - 10
5
10 -11
10 - 11
5
10 -12 10 -13 10 - 3
10 - 12 - 30
0 20 40 60 Ambient temperature T ( C ) a
80
100
10 - 2
10 - 1 1 Reverse voltage VR ( V )
10
10 2
Fig. 5 Terminal Capacitance vs. Reverse Voltage
6 f = 1MHz T a = 25C
Fig. 6 Relative Output vs. Ambient Temperature
160 GL480 140 A Relative output ( % ) 120 100 80 60 40 PD480Pl
5 Terminal capacitance C t ( pF )
4
3
2
1 20 0 0.1 0 - 25
Distance between infrared light emitting diode and photodiode shall be fixed when I sc = 25 A at I F = 20mA and T a = 25C. 0 25 50 75 100
0.2
0.5
1
2
5
10
20
50
100
Reverse voltage VR ( V )
Ambient temperature Ta ( C )
PD480PI/PD480PI1
Fig. 7 Sensitivity Diagram
- 20 - 10 0 100 - 30 Relative radiant intensity ( % ) +30 80 Relative output ( % ) 10 5
( Ta = 25C )
+10 +20
Fig. 8 Relative Output vs. Distance
100 50 GL480
- 40
60
+40
- 50 - 60 - 70 - 80 - 90
40
+50 +60
1 0.5 I F = 20mA Ta = 25C 0.1 0.1 0.5 1
20
+70 +80 +90
0 Angular displacement
5
10
50 100
Distance between emitter and detector d ( mm )
Fig. 9 Responce Time vs. Load Resistance
100 V R = 10V T a = 25C 10 Responce time t r , t f ( s )
Test Circuit for Responce Time
Laser diode 1 tr, t 0.1 Pulse generator 0.01 10 10 3 10 4 10 2 Load resistance RL ( ) 10 5
f
IOUT = 0.1mA PD480PI/ PD480PI1 + Output RL 10V
Input
90% Output 10% tr tr
q Please refer to the chapter "Precautions for Use."

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